Authors: O.I. Velichko
A theory describing the processes of atomic diffusion in a nonequilibrium state with nonuniform distributions of components in a defect?impurity system of silicon crystals is proposed. Based on this theory, partial diffusion models are constructed, and simulation of a large number of experimental data are curried out. A comparison of the simulation results with the experiment confirms the correctness and importance of the theory developed.
Comments: In Russian, 274 pages, 90 figures, 551 references
[v1] 2017-02-07 07:49:15
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